STP9NK50Z

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

SuperMESH™

Genişlik

4.6mm

Transistor Element Material

SILICON

Pin Sayısı

3

Input Capacitance Ciss Max Vds

910pF @ 25V

Turn Off Delay Time

45 ns

Montaj Tipi

Through Hole

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

3

Temel Parça No

STP9N

Number Of Elements

1

Fall Time Typ

22 ns

Akım Değeri

7.2A

Drain To Source Breakdown Voltage

500V

Direnç

850mOhm

Rise Time

20ns

Power Dissipation

110W

Continuous Drain Current Id

7.2A

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Rds On Max Id Vgs

850m Ω @ 3.6A, 10V

Vgs Max

±30V

Turn On Delay Time

17 ns

Power Dissipation Max

110W Tc

Element Configuration

Single

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

7.2A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Reach Svhc

No SVHC

Vgsth Max Id

4.5V @ 100μA

Pulsed Drain Currentmax Idm

28.8A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

9.15mm

Montaj

Through Hole