STP90N55F4

Teknik Özellikler

Case Connection

DRAIN

Fabrika Tedarik Süresi

42 Weeks

Gate Charge Qg Max Vgs

90nC @ 10V

Power Dissipation

150W

Rise Time

60ns

Continuous Drain Current Id

90A

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

55V

Fall Time Typ

30 ns

Jedec95 Code

TO-220AB

Direnç

8MOhm

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Number Of Elements

1

Montaj

Through Hole

Pin Sayısı

3

Additional Feature

ULTRA LOW-ON RESISTANCE

Pulsed Drain Currentmax Idm

360A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Temel Parça No

STP90N

Vgsth Max Id

4V @ 250μA

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

55 ns

Input Capacitance Ciss Max Vds

4800pF @ 25V

Current Continuous Drain Id25

90A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Ambalaj

Tube

Power Dissipation Max

150W Tc

Element Configuration

Single

Contact Plating

Tin

Nem Hassasiyeti (MSL)

Not Applicable