STP8NK80Z

Teknik Özellikler

Vgsth Max Id

4.5V @ 100μA

Current Continuous Drain Id25

6.2A Tc

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

140W Tc

Element Configuration

Single

Ambalaj

Tube

Vgs Max

±30V

Turn On Delay Time

17 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.5 Ω @ 3.1A, 10V

Parça Durumu

Active

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

46nC @ 10V

Fet Type

N-Channel

ECCN Kodu

EAR99

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Voltage Rated Dc

800V

Yükseklik

15.75mm

Montaj

Through Hole

Pulsed Drain Currentmax Idm

24.8A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1320pF @ 25V

Pin Sayısı

3

Montaj Tipi

Through Hole

Turn Off Delay Time

48 ns

Contact Plating

Tin

Genişlik

4.6mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

SuperMESH™

Kılıf / Paket

TO-220-3

Continuous Drain Current Id

6.2A

Gate To Source Voltage Vgs

30V