STP85NF55L

Teknik Özellikler

Ambalaj

Tube

Power Dissipation Max

300W Tc

Element Configuration

Single

Nem Hassasiyeti (MSL)

Not Applicable

Rds On Max Id Vgs

8m Ω @ 40A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

STripFET™ II

Transistor Application

SWITCHING

Vgs Max

±15V

Turn On Delay Time

35 ns

Avalanche Energy Rating Eas

980 mJ

Terminal Kaplaması

Matte Tin (Sn)

Vgsth Max Id

2.5V @ 250μA

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

70 ns

Input Capacitance Ciss Max Vds

4050pF @ 25V

Current Continuous Drain Id25

80A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Montaj

Through Hole

Pin Sayısı

3

Additional Feature

LOGIC LEVEL COMPATIBLE

Pulsed Drain Currentmax Idm

320A

Drive Voltage Max Rds On Min Rds On

5V 10V

Terminal Sayısı

3

Temel Parça No

STP85N

Case Connection

DRAIN

Fabrika Tedarik Süresi

38 Weeks

Rise Time

165ns

Power Dissipation

300W

Gate Charge Qg Max Vgs

110nC @ 5V

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

15V

Kılıf / Paket

TO-220-3

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No