STP80NF55-08

Teknik Özellikler

Weight

4.535924g

Current Continuous Drain Id25

80A Tc

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Transistor Application

SWITCHING

Rds On Max Id Vgs

8m Ω @ 40A, 10V

Turn On Delay Time

20 ns

Vgs Max

±20V

Power Dissipation Max

300W Tc

Element Configuration

Single

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Threshold Voltage

3V

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Lifecycle Status

NRND (Last Updated: 8 months ago)

Gate Charge Qg Max Vgs

155nC @ 10V

Radyasyon Dayanımı

No

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Montaj

Through Hole

Yükseklik

15.75mm

Voltage Rated Dc

55V

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

3850pF @ 25V

Pin Sayısı

3

Montaj Tipi

Through Hole

Turn Off Delay Time

75 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

STripFET™

Genişlik

4.6mm

Contact Plating

Tin

Fall Time Typ

25 ns

Drain To Source Breakdown Voltage

55V