STP80NF10

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

STripFET™ II

Genişlik

4.6mm

Terminal Kaplaması

Matte Tin (Sn)

Montaj Tipi

Through Hole

Turn Off Delay Time

116 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

5500pF @ 25V

Pin Sayısı

3

Number Of Elements

1

Pin Sayısı

3

Temel Parça No

STP80N

Rise Time

80ns

Power Dissipation

300W

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-220-3

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE

Akım Değeri

80A

Drain To Source Breakdown Voltage

100V

Fall Time Typ

60 ns

Direnç

15mOhm

Ambalaj

Tube

Element Configuration

Single

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

15m Ω @ 40A, 10V

Transistor Application

SWITCHING

Vgs Max

±20V

Turn On Delay Time

26 ns

Vgsth Max Id

4V @ 250μA

Weight

453.59237kg

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Yükseklik

9.15mm

Montaj

Through Hole

Voltage Rated Dc

100V

Drive Voltage Max Rds On Min Rds On

10V