STP80N20M5

Teknik Özellikler

Gate Charge Qg Max Vgs

104nC @ 10V

Power Dissipation

190W

Rise Time

31ns

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Radyasyon Dayanımı

No

Continuous Drain Current Id

61A

Gate To Source Voltage Vgs

25V

Kılıf / Paket

TO-220-3

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

176 ns

Threshold Voltage

4V

Drain To Source Breakdown Voltage

200V

Fet Type

N-Channel

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Direnç

23MOhm

Gerilim

200V

Number Of Elements

1

Montaj

Through Hole

Akım

61A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Temel Parça No

STP80N

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

5V @ 250μA

Kurşunsuz Kodu

yes

Pin Sayısı

3

Transistor Element Material

SILICON

Current Continuous Drain Id25

61A Tc

Input Capacitance Ciss Max Vds

4329pF @ 50V

Turn Off Delay Time

131 ns

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Power Dissipation Max

190W Tc

Element Configuration

Single

Ambalaj

Tube