STP80N10F7

Teknik Özellikler

Rds On Max Id Vgs

10m Ω @ 40A, 10V

Seri

DeepGATE™, STripFET™ VII

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

SWITCHING

Vgs Max

±20V

Turn On Delay Time

19 ns

Genişlik

15.75mm

Ambalaj

Tube

Element Configuration

Single

Power Dissipation Max

110W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

329.988449mg

Montaj Tipi

Through Hole

Turn Off Delay Time

36 ns

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Transistor Element Material

SILICON

Pin Sayısı

3

Input Capacitance Ciss Max Vds

3100pF @ 50V

Vgsth Max Id

4.5V @ 250μA

Number Of Channels

1

Additional Feature

ULTRA LOW-ON RESISTANCE

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Temel Parça No

STP80N

Number Of Elements

2

Yükseklik

4.6mm

Montaj

Through Hole

Drain To Source Breakdown Voltage

100V

Fall Time Typ

13 ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fet Type

N-Channel

ECCN Kodu

EAR99

Case Connection

DRAIN

Fabrika Tedarik Süresi

13 Weeks

Gate Charge Qg Max Vgs

45nC @ 10V

Power Dissipation

110W

Rise Time

32ns

Continuous Drain Current Id

80A