STP7NM80

Teknik Özellikler

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

620pF @ 25V

Pin Sayısı

3

Turn Off Delay Time

35 ns

Montaj Tipi

Through Hole

Genişlik

4.6mm

Avalanche Energy Rating Eas

240 mJ

Seri

MDmesh™

Çalışma Sıcaklığı

-55°C~150°C TJ

Contact Plating

Tin

Direnç

1.05Ohm

Fall Time Typ

10 ns

Drain To Source Breakdown Voltage

800V

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-220-3

Continuous Drain Current Id

3.25A

Power Dissipation

90W

Rise Time

8ns

Case Connection

ISOLATED

Temel Parça No

STP7N

Pin Sayısı

3

Number Of Elements

1

Current Continuous Drain Id25

6.5A Tc

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

20 ns

Vgs Max

±30V

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.05 Ω @ 3.25A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

90W Tc

Element Configuration

Single

Ambalaj

Tube

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB