STP7N95K3

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

SuperMESH3™

Avalanche Energy Rating Eas

220 mJ

Genişlik

4.6mm

Montaj Tipi

Through Hole

Turn Off Delay Time

36 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1031pF @ 100V

Pin Sayısı

3

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

3

Temel Parça No

STP7N

Number Of Elements

1

Drain To Source Breakdown Voltage

950V

Fall Time Typ

23 ns

Direnç

1.35Ohm

Power Dissipation

150W

Rise Time

9ns

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-220-3

Continuous Drain Current Id

7.2A

Rds On Max Id Vgs

1.35 Ω @ 3.6A, 10V

Transistor Application

SWITCHING

Turn On Delay Time

14 ns

Vgs Max

±30V

Ambalaj

Tube

Element Configuration

Single

Power Dissipation Max

150W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

7.2A Tc

Vgsth Max Id

5V @ 100μA

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

28.8A

Montaj

Through Hole

Yükseklik

15.75mm