STP7N52K3

Teknik Özellikler

Vgsth Max Id

4.5V @ 50μA

Current Continuous Drain Id25

6A Tc

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Power Dissipation Max

90W Tc

Ambalaj

Tube

Turn On Delay Time

11 ns

Vgs Max

±30V

Transistor Application

SWITCHING

Rds On Max Id Vgs

980m Ω @ 3.1A, 10V

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Parça Durumu

Active

Gate Charge Qg Max Vgs

34nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Threshold Voltage

3.75V

Montaj

Through Hole

Yükseklik

15.75mm

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

25A

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

3

Input Capacitance Ciss Max Vds

737pF @ 100V

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Turn Off Delay Time

36 ns

Genişlik

4.6mm

Seri

SuperMESH3™

Çalışma Sıcaklığı

150°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

6.2A