STP7N52DK3

Teknik Özellikler

Genişlik

4.6mm

Avalanche Energy Rating Eas

100 mJ

Çalışma Sıcaklığı

150°C TJ

Seri

SuperFREDmesh3™

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

870pF @ 50V

Pin Sayısı

3

Montaj Tipi

Through Hole

Turn Off Delay Time

37 ns

Terminal Kaplaması

Matte Tin (Sn)

Temel Parça No

STP7N

Additional Feature

ULTRA-LOW RESISTANCE

Pin Sayısı

3

Number Of Elements

1

Direnç

1.15Ohm

Fall Time Typ

4.2 ns

Drain To Source Breakdown Voltage

620V

Kılıf / Paket

TO-220-3

Continuous Drain Current Id

6A

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

90W

Rise Time

33ns

Vgs Max

±30V

Turn On Delay Time

12 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.15 Ω @ 3A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Power Dissipation Max

90W Tc

Ambalaj

Tube

Current Continuous Drain Id25

6A Tc

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4.5V @ 50μA

Pulsed Drain Currentmax Idm

24A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Yükseklik

15.75mm