STP75N3LLH6

Teknik Özellikler

Case Connection

DRAIN

Gate Charge Qg Max Vgs

23.8nC @ 4.5V

Power Dissipation

60W

Rise Time

30ns

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

75A

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

30V

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Fall Time Typ

12 ns

Drainsource On Resistancemax

0.0084Ohm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Montaj

Through Hole

Number Of Elements

1

Ds Breakdown Voltagemin

30V

Pin Sayısı

3

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pulsed Drain Currentmax Idm

300A

Temel Parça No

STP75N

Vgsth Max Id

2.5V @ 250μA

Montaj Tipi

Through Hole

Turn Off Delay Time

37 ns

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

75A Tc

Input Capacitance Ciss Max Vds

2030pF @ 25V

Ambalaj

Tube

Power Dissipation Max

60W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

DeepGATE™, STripFET™ VI

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

5.9m Ω @ 37.5A, 10V