STP6N80K5

Teknik Özellikler

Vgsth Max Id

5V @ 100μA

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

4.5A Tc

Input Capacitance Ciss Max Vds

255pF @ 100V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Power Dissipation Max

85W Tc

Avalanche Energy Rating Eas

85 mJ

Vgs Max

30V

Terminal Pozisyonu

SINGLE

Seri

SuperMESH5™

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

1.6 Ω @ 2A, 10V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

4.5A

Drain To Source Voltage Vdss

800V

Kılıf / Paket

TO-220-3

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Case Connection

DRAIN

Gate Charge Qg Max Vgs

7.5nC @ 10V

Fabrika Tedarik Süresi

17 Weeks

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Ds Breakdown Voltagemin

800V

Montaj

Through Hole

Number Of Elements

1

Temel Parça No

STP6N

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

18A