STP6N52K3

Teknik Özellikler

Genişlik

4.6mm

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

110 mJ

Seri

SuperMESH3™

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

Input Capacitance Ciss Max Vds

670pF @ 50V

Transistor Element Material

SILICON

Turn Off Delay Time

31 ns

Montaj Tipi

Through Hole

Number Of Elements

1

Temel Parça No

STP6N

Additional Feature

ULTRA-LOW RESISTANCE

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

5A

Kılıf / Paket

TO-220-3

Operating Mode

ENHANCEMENT MODE

Rise Time

11ns

Fall Time Typ

18 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

70W Tc

Ambalaj

Tube

Vgs Max

±30V

Turn On Delay Time

10 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.2 Ω @ 2.5A, 10V

Vgsth Max Id

4.5V @ 50μA

Current Continuous Drain Id25

5A Tc

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

525V

Yükseklik

15.75mm

Montaj

Through Hole

Pulsed Drain Currentmax Idm

20A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free