STP6N120K3

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Power Dissipation Max

150W Tc

Element Configuration

Single

Turn On Delay Time

30 ns

Vgs Max

±30V

Rds On Max Id Vgs

2.4 Ω @ 2.5A, 10V

Transistor Application

SWITCHING

Vgsth Max Id

5V @ 100μA

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

6A Tc

Max Junction Temperature Tj

150°C

Montaj

Through Hole

Yükseklik

19.68mm

Number Of Channels

1

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

20A

Drain To Source Voltage Vdss

1200V

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

6A

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

Gate Charge Qg Max Vgs

34nC @ 10V

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Threshold Voltage

4V

Contact Plating

Tin

Genişlik

4.6mm

Seri

SuperMESH3™

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Through Hole

Turn Off Delay Time

58 ns

Transistor Element Material

SILICON

Pin Sayısı

3

Input Capacitance Ciss Max Vds

1050pF @ 100V