STP65NF06

Teknik Özellikler

Number Of Elements

1

Ds Breakdown Voltagemin

60V

Pulsed Drain Currentmax Idm

240A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Temel Parça No

STP65N

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

75nC @ 10V

Case Connection

DRAIN

Drain Currentmax Abs Id

60A

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-220-3

Drain To Source Voltage Vdss

60V

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

NO

Drainsource On Resistancemax

0.014Ohm

Fet Type

N-Channel

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Power Dissipation Max

110W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

14m Ω @ 30A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

STripFET™ II

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

390 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4V @ 250μA

Qualification Status

Not Qualified

Input Capacitance Ciss Max Vds

1700pF @ 25V

Current Continuous Drain Id25

60A Tc