STP46NF30

Teknik Özellikler

Vgsth Max Id

4V @ 250μA

Çalışma Sıcaklığı

175°C TJ

Power Dissipation

300W

Montaj

Through Hole

Drain To Source Breakdown Voltage

300V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

42A Tc

Fall Time Typ

46 ns

Case Connection

DRAIN

Continuous Drain Current Id

42A

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Rise Time

38ns

Drainsource On Resistancemax

0.075Ohm

Input Capacitance Ciss Max Vds

3200pF @ 25V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Seri

STripFET™ II

Gate Charge Qg Max Vgs

90nC @ 10V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Sayısı

3

Temel Parça No

STP46N

Avalanche Energy Rating Eas

290 mJ

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-220-3

Turn Off Delay Time

80 ns

Vgs Max

±20V

JESD-609 Kodu

e3

Ambalaj

Tube

Power Dissipation Max

300W Tc