STP40NF12

Teknik Özellikler

Current Continuous Drain Id25

40A Tc

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

120V

Montaj

Through Hole

Power Dissipation

150W

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

28 ns

Input Capacitance Ciss Max Vds

1880pF @ 25V

Contact Plating

Tin

Voltage Rated Dc

120V

Drainsource On Resistancemax

0.032Ohm

Rise Time

63ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

40A

Fall Time Typ

28 ns

Temel Parça No

STP40N

Terminal Sayısı

3

Fet Type

N-Channel

Gate Charge Qg Max Vgs

80nC @ 10V

Seri

STripFET™ II

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Lifecycle Status

NRND (Last Updated: 8 months ago)

Parça Durumu

Not For New Designs

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Akım Değeri

40A

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

32m Ω @ 20A, 10V

Power Dissipation Max

150W Tc