STP36N60M6

Teknik Özellikler

Number Of Elements

1

Case Connection

DRAIN

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

600V

Drainsource On Resistancemax

0.099Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Pulsed Drain Currentmax Idm

102A

Input Capacitance Ciss Max Vds

1960pF @ 100V

Drain Currentmax Abs Id

30A

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

4.75V @ 250μA

Drain To Source Voltage Vdss

600V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

30A Tc

Kılıf / Paket

TO-220-3

Vgs Max

±25V

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

99m Ω @ 15A, 10V

Power Dissipation Max

208W Tc

Montaj Tipi

Through Hole

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Seri

MDmesh™ M6

Gate Charge Qg Max Vgs

44.3nC @ 10V

Fet Type

N-Channel

Temel Parça No

STP36N

Avalanche Energy Rating Eas

750 mJ

Fabrika Tedarik Süresi

16 Weeks

Terminal Sayısı

3