STP35N65M5

Teknik Özellikler

Power Dissipation

160W

Montaj

Through Hole

Turn On Delay Time

60 ns

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Direnç

98MOhm

Current Continuous Drain Id25

27A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

650V

Genişlik

4.6mm

Element Configuration

Single

Transistor Element Material

SILICON

Continuous Drain Current Id

27A

Case Connection

ISOLATED

Fall Time Typ

16 ns

Number Of Elements

1

Input Capacitance Ciss Max Vds

3750pF @ 100V

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

Not Applicable

Rise Time

12ns

Pin Sayısı

3

Threshold Voltage

4V

Radyasyon Dayanımı

No

Terminal Sayısı

3

Avalanche Energy Rating Eas

800 mJ

Temel Parça No

STP35N

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

83nC @ 10V

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ V

Pin Sayısı

3

Ambalaj

Tube

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Turn Off Delay Time

60 ns

Vgs Max

±25V