STP34NM60N

Teknik Özellikler

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Radyasyon Dayanımı

No

Power Dissipation Max

250W Tc

Yükseklik

15.75mm

Kılıf / Paket

TO-220-3

Vgs Max

±25V

Reach Svhc

No SVHC

Ambalaj

Tube

Genişlik

4.6mm

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Uzunluk

10.4mm

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

17 ns

Power Dissipation

210W

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

70 ns

Transistor Element Material

SILICON

Number Of Elements

1

Seri

MDmesh™ II

Pin Sayısı

3

Gate Charge Qg Max Vgs

80nC @ 10V

Terminal Sayısı

3

Fabrika Tedarik Süresi

16 Weeks

Temel Parça No

STP34N

Rds On Max Id Vgs

105m Ω @ 14.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Parça Durumu

Active

Turn Off Delay Time

106 ns

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

600V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

29A Tc