STP33N65M2

Teknik Özellikler

Kılıf / Paket

TO-220-3

Turn Off Delay Time

72.5 ns

Vgs Max

±25V

Ambalaj

Tube

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

140m Ω @ 12A, 10V

Power Dissipation Max

190W Tc

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ M2

Pin Sayısı

3

Gate Charge Qg Max Vgs

41.5nC @ 10V

Fet Type

N-Channel

Terminal Sayısı

3

Temel Parça No

STP33N

Fabrika Tedarik Süresi

16 Weeks

Avalanche Energy Rating Eas

780 mJ

Transistor Element Material

SILICON

Continuous Drain Current Id

24A

Case Connection

DRAIN

Number Of Elements

1

Ds Breakdown Voltagemin

650V

Element Configuration

Single

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.14Ohm

Input Capacitance Ciss Max Vds

1790pF @ 100V

Pulsed Drain Currentmax Idm

96A

Turn On Delay Time

13.5 ns

Vgsth Max Id

4V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Montaj

Through Hole

Genişlik

4.6mm

Drain To Source Voltage Vdss

650V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99