STP30N65M5

Teknik Özellikler

Number Of Elements

1

Fall Time Typ

10 ns

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Power Dissipation

140W

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

50 ns

Uzunluk

10.4mm

ECCN Kodu

EAR99

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Genişlik

4.6mm

Ambalaj

Tube

Reach Svhc

No SVHC

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Yükseklik

15.75mm

Additional Feature

AVALANCHE ENERGY RATED

Power Dissipation Max

140W Tc

Radyasyon Dayanımı

No

Configuration

SINGLE WITH BUILT-IN DIODE

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

22A

Input Capacitance Ciss Max Vds

2880pF @ 100V

Pulsed Drain Currentmax Idm

88A

Rise Time

8ns

Jedec95 Code

TO-220AB

Threshold Voltage

4V

Pin Sayısı

3

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

22A Tc

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

650V

JESD-609 Kodu

e3

Turn Off Delay Time

50 ns