STP2N80K5

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

3nC @ 10V

Pin Sayısı

3

Seri

SuperMESH5™

Gate To Source Voltage Vgs

30V

Fabrika Tedarik Süresi

17 Weeks

Avalanche Energy Rating Eas

60.5 mJ

Temel Parça No

STP2N

Terminal Sayısı

3

Fet Type

N-Channel

Turn Off Delay Time

19 ns

Kılıf / Paket

TO-220-3

Ambalaj

Tube

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

4.5 Ω @ 1A, 10V

Power Dissipation Max

45W Tc

Parça Durumu

Active

Montaj Tipi

Through Hole

Yükseklik

15.75mm

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain Currentmax Abs Id

2A

Turn On Delay Time

8 ns

Vgsth Max Id

5V @ 100μA

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

800V

Genişlik

4.6mm

Current Continuous Drain Id25

2A Tc

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

2A

Element Configuration

Single

Weight

329.988449mg

Jedec95 Code

TO-220AB