STP25NM60ND

Teknik Özellikler

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Radyasyon Dayanımı

No

Power Dissipation Max

160W Tc

Yükseklik

15.75mm

Kılıf / Paket

TO-220-3

Vgs Max

±25V

Reach Svhc

No SVHC

Ambalaj

Tube

Genişlik

4.6mm

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Uzunluk

10.4mm

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

60 ns

Montaj

Through Hole

Power Dissipation

160W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fall Time Typ

40 ns

Transistor Element Material

SILICON

Pin Sayısı

3

Seri

FDmesh™ II

Gate Charge Qg Max Vgs

80nC @ 10V

Avalanche Energy Rating Eas

850 mJ

Temel Parça No

STP25N

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

160m Ω @ 10.5A, 10V

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Turn Off Delay Time

50 ns

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

600V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

21A Tc

Direnç

160mOhm