STP23NM50N

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

25V

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Radyasyon Dayanımı

No

Power Dissipation Max

125W Tc

Yükseklik

15.75mm

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

Reach Svhc

No SVHC

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Genişlik

4.6mm

Uzunluk

10.4mm

Power Dissipation

125W

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

6.6 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Fall Time Typ

29 ns

Number Of Elements

1

Gate Charge Qg Max Vgs

45nC @ 10V

Seri

MDmesh™ II

Pin Sayısı

3

Terminal Sayısı

3

Avalanche Energy Rating Eas

254 mJ

Fabrika Tedarik Süresi

16 Weeks

Temel Parça No

STP23N

Kurşunsuz

Lead Free

Rds On Max Id Vgs

190m Ω @ 8.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Montaj Tipi

Through Hole

Turn Off Delay Time

71 ns

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

500V

Current Continuous Drain Id25

17A Tc