STP21N90K5

Teknik Özellikler

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Temel Parça No

STP21N

Fabrika Tedarik Süresi

17 Weeks

Terminal Sayısı

3

Gate To Source Voltage Vgs

30V

Seri

SuperMESH5™

Gate Charge Qg Max Vgs

43nC @ 10V

Ambalaj

Tube

Kılıf / Paket

TO-220-3

Vgs Max

±30V

Turn Off Delay Time

52 ns

Montaj Tipi

Through Hole

Parça Durumu

Active

Power Dissipation Max

250W Tc

Rds On Max Id Vgs

299m Ω @ 9A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

5V @ 100μA

Turn On Delay Time

17 ns

Montaj

Through Hole

Power Dissipation

250W

Direnç

299MOhm

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

18.5A Tc

Drain To Source Breakdown Voltage

900V

Terminal Pozisyonu

SINGLE

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Number Of Elements

1

Transistor Element Material

SILICON

Fall Time Typ

40 ns

Continuous Drain Current Id

18.5A

Pulsed Drain Currentmax Idm

68A

Input Capacitance Ciss Max Vds

1645pF @ 100V