STP21N65M5

Teknik Özellikler

Continuous Drain Current Id

17A

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Pin Sayısı

3

Threshold Voltage

4V

Pulsed Drain Currentmax Idm

68A

Input Capacitance Ciss Max Vds

1950pF @ 100V

Power Dissipation

125W

Montaj

Through Hole

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

150°C TJ

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Genişlik

4.6mm

Drain To Source Breakdown Voltage

650V

Current Continuous Drain Id25

17A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Power Dissipation Max

125W Tc

Rds On Max Id Vgs

190m Ω @ 8.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Montaj Tipi

Through Hole

Yükseklik

15.75mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

50nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ V

Pin Sayısı

3