STP20NM65N

Teknik Özellikler

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ II

Pin Sayısı

3

Gate Charge Qg Max Vgs

44nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Fet Type

N-Channel

Terminal Sayısı

3

Temel Parça No

STP20N

Kılıf / Paket

TO-220-3

Turn Off Delay Time

75 ns

Vgs Max

±25V

JESD-609 Kodu

e3

Ambalaj

Tube

Power Dissipation Max

125W Tc

Rds On Max Id Vgs

270m Ω @ 7.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Additional Feature

AVALANCHE RATED

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Yükseklik

15.75mm

Parça Durumu

Obsolete

Direnç

270mOhm

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

15 ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

160W

Montaj

Through Hole

Genişlik

4.6mm

Drain To Source Breakdown Voltage

650V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Uzunluk

10.4mm

Current Continuous Drain Id25

15A Tc

Transistor Element Material

SILICON

Continuous Drain Current Id

15A

Fall Time Typ

20 ns

Number Of Elements

1