STP20NM50FD

Teknik Özellikler

Direnç

250mOhm

Turn On Delay Time

22 ns

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

-65°C~150°C TJ

Power Dissipation

192W

Montaj

Through Hole

Drain To Source Breakdown Voltage

500V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

RoHS Durumu

Non-RoHS Compliant

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

20A Tc

Fall Time Typ

15 ns

Continuous Drain Current Id

20A

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Rise Time

20ns

Voltage Rated Dc

500V

Pulsed Drain Currentmax Idm

80A

Input Capacitance Ciss Max Vds

1380pF @ 25V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

30V

Seri

FDmesh™

Gate Charge Qg Max Vgs

53nC @ 10V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Sayısı

3

Temel Parça No

STP20N

Avalanche Energy Rating Eas

700 mJ

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

TO-220-3

Vgs Max

±30V

JESD-609 Kodu

e3

Ambalaj

Tube