STP190N55LF3

Teknik Özellikler

Element Configuration

Single

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Fall Time Typ

40 ns

Number Of Elements

1

Input Capacitance Ciss Max Vds

6200pF @ 25V

Pulsed Drain Currentmax Idm

480A

Pin Sayısı

3

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

40ns

Turn On Delay Time

20 ns

Vgsth Max Id

2.5V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

312W

Montaj

Through Hole

Direnç

3.7Ohm

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

120A Tc

Drain To Source Breakdown Voltage

55V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Ambalaj

Tube

Kılıf / Paket

TO-220-3

Turn Off Delay Time

160 ns

Vgs Max

±18V

Montaj Tipi

Through Hole

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

5V 10V

Rds On Max Id Vgs

3.7m Ω @ 30A, 10V

Power Dissipation Max

312W Tc

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fet Type

N-Channel

Terminal Sayısı

3

Temel Parça No

STP190