STP18NM80

Teknik Özellikler

Uzunluk

10.4mm

Genişlik

4.6mm

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

18 ns

Montaj

Through Hole

Power Dissipation

190W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Transistor Element Material

SILICON

Fall Time Typ

50 ns

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Terminal Kaplaması

Matte Tin (Sn)

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

15.75mm

Power Dissipation Max

190W Tc

Reach Svhc

No SVHC

Ambalaj

Tube

Kılıf / Paket

TO-220-3

Vgs Max

±30V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

17A Tc

Drain To Source Breakdown Voltage

800V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Direnç

295MOhm

Input Capacitance Ciss Max Vds

2070pF @ 50V

Pulsed Drain Currentmax Idm

68A

Threshold Voltage

4V

Pin Sayısı

3

Rise Time

28ns

Jedec95 Code

TO-220AB

Element Configuration

Single

Continuous Drain Current Id

17A

Temel Parça No

STP18N

Avalanche Energy Rating Eas

600 mJ

Fabrika Tedarik Süresi

16 Weeks