STP18N65M5

Teknik Özellikler

Vgs Max

±25V

Turn Off Delay Time

36 ns

Kılıf / Paket

TO-220-3

Ambalaj

Tube

Kurşunsuz

Lead Free

Power Dissipation Max

110W Tc

Rds On Max Id Vgs

220m Ω @ 7.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

31nC @ 10V

Pin Sayısı

3

Seri

MDmesh™ V

Gate To Source Voltage Vgs

25V

Fabrika Tedarik Süresi

17 Weeks

Temel Parça No

STP18N

Terminal Sayısı

3

Fet Type

N-Channel

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

15A

Case Connection

DRAIN

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Input Capacitance Ciss Max Vds

1240pF @ 100V

Pulsed Drain Currentmax Idm

60A

Direnç

220mOhm

Montaj

Through Hole

Power Dissipation

110W

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

36 ns

Vgsth Max Id

5V @ 250μA

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

650V