STP18N60M2

Teknik Özellikler

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Terminal Sayısı

3

Temel Parça No

STP18N

Fabrika Tedarik Süresi

16 Weeks

Fet Type

N-Channel

Gate Charge Qg Max Vgs

21.5nC @ 10V

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ II Plus

Pin Sayısı

3

Ambalaj

Tube

Turn Off Delay Time

47 ns

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Montaj Tipi

Through Hole

Yükseklik

15.75mm

Kurşunsuz

Lead Free

Power Dissipation Max

110W Tc

Rds On Max Id Vgs

280m Ω @ 6.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

12 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Direnç

280mOhm

Current Continuous Drain Id25

13A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Genişlik

4.6mm

Drain To Source Voltage Vdss

600V

Element Configuration

Single

Ds Breakdown Voltagemin

600V

Fall Time Typ

10.6 ns

Case Connection

DRAIN

Continuous Drain Current Id

13A

Transistor Element Material

SILICON