STP18N55M5

Teknik Özellikler

Number Of Elements

1

Fall Time Typ

13 ns

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 250μA

Montaj

Through Hole

Power Dissipation

90W

Genişlik

4.6mm

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Uzunluk

10.4mm

Kılıf / Paket

TO-220-3

Vgs Max

±25V

Reach Svhc

No SVHC

Ambalaj

Tube

Power Dissipation Max

110W Tc

Additional Feature

ULTRA-LOW RESISTANCE

Yükseklik

15.75mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Matte Tin (Sn)

Fet Type

N-Channel

Continuous Drain Current Id

13A

Element Configuration

Single

Threshold Voltage

4V

Pin Sayısı

3

Rise Time

9.5ns

Jedec95 Code

TO-220AB

Input Capacitance Ciss Max Vds

1260pF @ 100V

Pulsed Drain Currentmax Idm

52A

Direnç

240MOhm

Çalışma Sıcaklığı

150°C TJ

Drain To Source Breakdown Voltage

550V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

16A Tc

Turn Off Delay Time

29 ns

JESD-609 Kodu

e3

Rds On Max Id Vgs

192m Ω @ 8A, 10V