STP185N55F3

Teknik Özellikler

Additional Feature

ULTRA-LOW RESISTANCE

Power Dissipation Max

330W Tc

Rds On Max Id Vgs

3.8m Ω @ 60A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Montaj Tipi

Through Hole

Vgs Max

±20V

Turn Off Delay Time

110 ns

Kılıf / Paket

TO-220-3

Ambalaj

Tube

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

100nC @ 10V

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Seri

STripFET™

Temel Parça No

STP185

Avalanche Energy Rating Eas

1000 mJ

Fabrika Tedarik Süresi

12 Weeks

Terminal Sayısı

3

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.0038Ohm

Rise Time

150ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Pulsed Drain Currentmax Idm

480A

Input Capacitance Ciss Max Vds

6800pF @ 25V

Number Of Elements

1

Continuous Drain Current Id

120A

Fall Time Typ

50 ns

Transistor Element Material

SILICON

Element Configuration

Single

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

55V

Current Continuous Drain Id25

120A Tc

Jesd30 Code

R-PSFM-T3