STP165N10F4

Teknik Özellikler

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

5.5m Ω @ 60A, 10V

Drain To Source Breakdown Voltage

100V

Transistor Application

SWITCHING

Rise Time

62ns

Kurşunsuz

Lead Free

Element Configuration

Single

Ambalaj

Tube

Turn Off Delay Time

154 ns

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

480A

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

ECCN Kodu

EAR99

Temel Parça No

STP165

Continuous Drain Current Id

120A

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Seri

DeepGATE™, STripFET™

Input Capacitance Ciss Max Vds

10500pF @ 25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

20 Weeks

Current Continuous Drain Id25

120A Tc

Vgs Max

±20V

Power Dissipation Max

315W Tc

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Fall Time Typ

106 ns

Montaj Tipi

Through Hole

Turn On Delay Time

29.6 ns

Power Dissipation

315W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Pin Sayısı

3

Direnç

5.5MOhm

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

180nC @ 10V

Vgsth Max Id

4V @ 250μA