STP15NM65N

Teknik Özellikler

Jedec95 Code

TO-220AB

Vgs Max

±25V

Power Dissipation Max

125W Tc

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3V

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

25V

Power Dissipation

125W

Additional Feature

AVALANCHE RATED

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

15.75mm

Rise Time

8ns

Transistor Application

SWITCHING

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rds On Max Id Vgs

380m Ω @ 6A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Pulsed Drain Currentmax Idm

48A

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Current Continuous Drain Id25

12A Tc

Fall Time Typ

26 ns

JESD-609 Kodu

e3

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

983pF @ 50V

Genişlik

4.6mm

Montaj

Through Hole

Montaj Tipi

Through Hole

Turn On Delay Time

55.5 ns

Gate Charge Qg Max Vgs

33.3nC @ 10V

Direnç

350mOhm