STP15NM60ND

Teknik Özellikler

Fall Time Typ

28 ns

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Vgs Max

±25V

Power Dissipation Max

125W Tc

Current Continuous Drain Id25

14A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

1250pF @ 50V

Threshold Voltage

4V

Seri

FDmesh™ II

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

25V

Montaj

Through Hole

Genişlik

4.6mm

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

40nC @ 10V

Vgsth Max Id

5V @ 250μA

Yükseklik

15.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Direnç

299mOhm

Pin Sayısı

3

Turn On Delay Time

17 ns

Montaj Tipi

Through Hole

Power Dissipation

125W

Turn Off Delay Time

47 ns

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

20ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

299m Ω @ 7A, 10V

Drain To Source Breakdown Voltage

600V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Continuous Drain Current Id

14A