STP150NF55

Teknik Özellikler

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Seri

STripFET™ II

Input Capacitance Ciss Max Vds

4400pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

120A Tc

Power Dissipation Max

300W Tc

Vgs Max

±20V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Fall Time Typ

80 ns

Turn On Delay Time

35 ns

Montaj Tipi

Through Hole

Power Dissipation

300W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Avalanche Energy Rating Eas

850 mJ

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Direnç

6MOhm

Gate Charge Qg Max Vgs

190nC @ 10V

Vgsth Max Id

4V @ 250μA

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

6m Ω @ 60A, 10V

Drain To Source Breakdown Voltage

55V

Transistor Application

SWITCHING

Rise Time

180ns

Kurşunsuz

Lead Free

Element Configuration

Single

Turn Off Delay Time

140 ns

Ambalaj

Tube

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

480A