STP150N3LLH6

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Parça Durumu

Obsolete

Avalanche Energy Rating Eas

525 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Direnç

3.3MOhm

Pin Sayısı

3

Gate Charge Qg Max Vgs

40nC @ 4.5V

Vgsth Max Id

2.5V @ 250μA

Montaj Tipi

Through Hole

Power Dissipation

110W

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Fall Time Typ

46 ns

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

110W Tc

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

4040pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

TO-220-3

Seri

DeepGATE™, STripFET™ VI

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

80A

Temel Parça No

STP150

Number Of Elements

1

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Case Connection

DRAIN

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

320A

Kurşunsuz

Lead Free

Element Configuration

Single

Ambalaj

Tube

Turn Off Delay Time

75 ns