STP13N95K3

Teknik Özellikler

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

16ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

850m Ω @ 5A, 10V

ECCN Kodu

EAR99

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Vgs Max

±30V

Power Dissipation Max

190W Tc

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

4V

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

30V

Parça Durumu

Active

Vgsth Max Id

5V @ 100μA

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

15.75mm

Power Dissipation

190W

Additional Feature

ULTRA-LOW RESISTANCE

Turn Off Delay Time

50 ns

Drain To Source Breakdown Voltage

950V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Continuous Drain Current Id

10A

Temel Parça No

STP13N

Number Of Elements

1

Pin Sayısı

3

Fall Time Typ

21 ns

Fet Type

N-Channel

Current Continuous Drain Id25

10A Tc

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1620pF @ 100V

Seri

SuperMESH3™