STP13N80K5

Teknik Özellikler

Current Continuous Drain Id25

12A Tc

Power Dissipation Max

190W Tc

Vgs Max

±30V

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Fall Time Typ

16 ns

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Seri

SuperMESH5™

Input Capacitance Ciss Max Vds

870pF @ 100V

Fabrika Tedarik Süresi

17 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Genişlik

4.6mm

Montaj

Through Hole

Gate To Source Voltage Vgs

30V

Power Dissipation

190W

Montaj Tipi

Through Hole

Turn On Delay Time

16 ns

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

15.75mm

Vgsth Max Id

5V @ 100μA

Gate Charge Qg Max Vgs

29nC @ 10V

Transistor Application

SWITCHING

Rise Time

16ns

Element Configuration

Single

Ambalaj

Tube

Turn Off Delay Time

42 ns

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

800V

Rds On Max Id Vgs

450m Ω @ 6A, 10V

Number Of Elements

1

Drainsource On Resistancemax

0.45Ohm

ECCN Kodu

EAR99

Temel Parça No

STP13N

Continuous Drain Current Id

12A

Pin Sayısı

3