STP12NM50FP

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Pulsed Drain Currentmax Idm

48A

Terminal Kaplaması

Matte Tin (Sn) - annealed

Rds On Max Id Vgs

350m Ω @ 6A, 10V

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

10ns

Transistor Application

SWITCHING

Vgsth Max Id

5V @ 50μA

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yükseklik

20mm

Power Dissipation

35W

Voltage Rated Dc

500V

Additional Feature

AVALANCHE RATED

Gate To Source Voltage Vgs

30V

Parça Durumu

Active

Çalışma Sıcaklığı

-65°C~150°C TJ

Threshold Voltage

4V

Radyasyon Dayanımı

No

Akım Değeri

12A

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Power Dissipation Max

35W Tc

Vgs Max

±30V

Case Connection

ISOLATED

Pin Sayısı

3

Temel Parça No

STP12

Continuous Drain Current Id

12A

Number Of Elements

1

Drain To Source Breakdown Voltage

500V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Gate Charge Qg Max Vgs

39nC @ 10V

Direnç

350mOhm

Avalanche Energy Rating Eas

400 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)