STP12N120K5

Teknik Özellikler

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Seri

MDmesh™ K5

Input Capacitance Ciss Max Vds

1370pF @ 100V

Fabrika Tedarik Süresi

17 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±30V

Power Dissipation Max

250W Tc

Current Continuous Drain Id25

12A Tc

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

1200V

Power Dissipation

250W

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 100μA

Gate Charge Qg Max Vgs

44.2nC @ 10V

Parça Durumu

Active

Montaj

Through Hole

Gate To Source Voltage Vgs

30V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

690m Ω @ 6A, 10V

Transistor Application

SWITCHING

Ambalaj

Tube

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

48A

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Number Of Elements

1

Drainsource On Resistancemax

0.69Ohm

ECCN Kodu

EAR99

Temel Parça No

STP12

Continuous Drain Current Id

12A