STP120N4F6

Teknik Özellikler

Power Dissipation Max

110W Tc

Vgs Max

±20V

Current Continuous Drain Id25

80A Tc

Fet Type

N-Channel

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Fall Time Typ

20 ns

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Seri

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Input Capacitance Ciss Max Vds

3850pF @ 25V

Fabrika Tedarik Süresi

20 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Parça Durumu

Active

Genişlik

4.6mm

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

40V

Power Dissipation

110W

Montaj Tipi

Through Hole

Turn On Delay Time

20 ns

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Yükseklik

15.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

65nC @ 10V

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

40V

Rise Time

70ns

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Turn Off Delay Time

40 ns

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

4.3m Ω @ 40A, 10V

Number Of Elements

1