STP11NM65N

Teknik Özellikler

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

455m Ω @ 5.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Turn Off Delay Time

55 ns

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

13ns

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

48A

Jesd30 Code

R-PSFM-T3

Continuous Drain Current Id

12A

Temel Parça No

STP11N

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Number Of Elements

1

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

800pF @ 50V

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Fall Time Typ

20 ns

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Current Continuous Drain Id25

11A Tc

Power Dissipation Max

110W Tc

Vgs Max

±25V

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

29nC @ 10V

Pin Sayısı

3

Direnç

380mOhm

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

300 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

125W

Turn On Delay Time

11 ns