STP11NM60ND

Teknik Özellikler

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Power Dissipation

90W

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yükseklik

15.75mm

Vgsth Max Id

5V @ 250μA

Vgs Max

±25V

Power Dissipation Max

90W Tc

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

150°C TJ

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

40A

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Transistor Application

SWITCHING

Rise Time

7ns

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Contact Plating

Tin

Rds On Max Id Vgs

450m Ω @ 5A, 10V

Genişlik

4.6mm

Montaj

Through Hole

Montaj Tipi

Through Hole

Turn On Delay Time

16 ns

Direnç

450mOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Avalanche Energy Rating Eas

200 mJ

Gate Charge Qg Max Vgs

30nC @ 10V

Current Continuous Drain Id25

10A Tc

Fet Type

N-Channel

Fall Time Typ

9 ns

Kılıf / Paket

TO-220-3

Seri

FDmesh™ II