STP11NM60N

Teknik Özellikler

Voltage Rated Dc

600V

Power Dissipation

90W

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Vgsth Max Id

4V @ 250μA

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

25V

Radyasyon Dayanımı

No

Threshold Voltage

3V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

90W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Akım Değeri

10A

Pulsed Drain Currentmax Idm

40A

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Rds On Max Id Vgs

450m Ω @ 5A, 10V

Transistor Application

SWITCHING

Rise Time

18.5ns

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Montaj Tipi

Through Hole

Turn On Delay Time

22 ns

Direnç

450MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

200 mJ

Gate Charge Qg Max Vgs

31nC @ 10V

Montaj

Through Hole

Kılıf / Paket

TO-220-3

Seri

MDmesh™ II

Input Capacitance Ciss Max Vds

850pF @ 50V

Current Continuous Drain Id25

10A Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Fall Time Typ

12 ns